Samsung unveils technology for 144MP image sensors
South
Korean tech giant Samsung
has unveiled a new 14nm FinFET fabrication technology at the
International
Electron Devices Meeting 2019
(IEDM) conference which will be used to develop 144MP smartphone
cameras.
FinFET
ICs use "fins" to control the voltage of a chip helping it
to increase performance with lower energy consumption.
The
14nm FinFET technology will allow for a 42 per cent reduction in
power consumption in a 144MP sensor while capturing images at 10fps.
For a 12MP readout at 30-120fps (i.e. recording video), the power
savings can be up to 37 per cent, news portal GSMArena reported on
Monday.
Additionally,
using 14nm FinFET fabrication will help the company to create a 3D
Stack CMOS Image Sensor.
Famed
leakster Ice Universe had claimed that the Samsung's next-gen Galaxy
S11 smartphone may have a 108 MP sensor with 9-to-1 Bayer technology
and not 4-in-1 seen in the current-generation 108MP sensor. Read
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